Tellurium films were deposited by thermal evaporation on a molybdenum subst
rate held at 120 degrees C. The growth of the films was monitored by quanti
tative X-ray photoelectron spectroscopy and by atomic force microscopy. Rea
ction of the Te films with K vapour was also used to evaluate the thickness
of the films. It has been found that for low exposures Te grows as a unifo
rm layer, up to a thickness of about 0.4 nm. For higher exposures we observ
ed the formation of islands of increasing thickness that cover an increasin
g fraction of the substrate, the remaining fraction being covered by a cont
inuous thin layer. Implications of such a morphology on the performances of
Te-based photocathodes in photo-injectors technology are discussed. (C) 19
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