Improved stability of interfaces in organic light emitting diodes with high T-g materials and self-assembled monolayers

Citation
M. Carrard et al., Improved stability of interfaces in organic light emitting diodes with high T-g materials and self-assembled monolayers, THIN SOL FI, 352(1-2), 1999, pp. 189-194
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
352
Issue
1-2
Year of publication
1999
Pages
189 - 194
Database
ISI
SICI code
0040-6090(19990908)352:1-2<189:ISOIIO>2.0.ZU;2-L
Abstract
In order to improve the thermal stability of organic light emitting diodes (OLED), films made of classical hole transporters (TPD and NPB) and of new blue emitters (based on carbazole dimers) have been deposited on bare ITO s ubstrates, and on ITO grafted with three different self-assembled molecules . These materials have low (60-70 degrees C) and high (90-100 degrees C) gl ass transition temperatures (T-g). The surface properties like desorption, surface diffusion and wettability, have been studied by observing the morph ology of the films with scanning electron microscopy. High T-g films show h igher stability and reduced desorption. A similar effect is obtained with t he grafted substrates. These tendencies can be explained by considering the polarizability of the molecules. This points towards possible improvements in the running temperature of OLED devices. (C) 1999 Elsevier Science S.A. All rights reserved.