Transfer of PbSe/PbEuSe epilayers grown by MBE on BaF2-coated Si(111)

Epitaxial growth of PbSe/PbEuSe/BaF2/CaF2 heterostructures was carried out by a molecular beam epitaxy on Si(111) wafers. Successful transfer of 3-mu m thick PbSe/PbEuSe epilayers was accomplished by bonding the MBE-grown sam ples face down to polished copper plates followed by the removal of the sil icon substrate by dissolving the BaF2 buffer layer in water. Nomarski micro scopy and surface profile characterization showed that the transferred PbSe /PbEuSe layer had mirror-like morphology. High-resolution X-ray diffraction measurements demonstrated that the PbSe/PbEuSe epilayers maintained high c rystalline quality after transfer, and surface analysis by X-ray photoelect ron spectroscopy indicated complete removal of BaF2 buffer layer. The above results indicate that bonded PbSe/PbEuSe could be used as a new substrate material for regrowth of high quality PbSe-related heterostructure devices. (C) 1999 Elsevier Science S.A. All rights reserved.