High-power diode-pumped AlGaAs surface-emitting laser

Authors
Holm, MA Burns, D Cusumano, P Ferguson, AI Dawson, MD
Citation
Ma. Holm et al., High-power diode-pumped AlGaAs surface-emitting laser, APPL OPTICS, 38(27), 1999, pp. 5781-5784
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
APPLIED OPTICS
ISSN journal
00036935 → ACNP
Volume
38
Issue
27
Year of publication
1999
Pages
5781 - 5784
Database
ISI
SICI code
0003-6935(19990920)38:27<5781:HDASL>2.0.ZU;2-H
Abstract
We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at similar to 870 nm. Hy us ing a semiconductor Bragg reflector stack/multiple GaAs quantum well struct ure, mounted within a conventional laser cavity, we achieved single transve rse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral r ange has been obtained. (C) 1999 Optical Society of America OCIS codes: 140 .3480, 140.6630,250.7270.