High-power, reliable operation of 730 nm AlGaAs laser diodes

High-power operation of AlGaAs multi-quantum-well laser diodes emitting nea r 730 nm is reported. 1000 h, reliable operation at a power of 1.0 W for 10 0 mu m emission aperture and 500 mu m cavity length devices has been demons trated at room temperature. These devices have threshold current densities of 770 A/cm(2) with the characteristic temperature coefficients of threshol d current, T-0, and external differential quantum efficiency, T-1, of 152 a nd 167 K, respectively. (C) 1999 American Institute of Physics. [S0003- 695 1(99)03140-X].