Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3(Gd2O3)/GaAs

Device-quality Ga2O3(Gd2O3) thin films have been grown on GaAs using molecu lar-beam epitaxy. Photoluminescence measurements have been performed within a temperature range of 4.2-300 K. Detailed analysis on the peak position, peak width, and peak intensity has been compared with those of a convention al Al0.45Ga0.55As/GaAs sample, which is known to be the state-of-the-art st ructure of dielectrics/GaAs. Both the peak intensity and the peak width are very similar between the two. The results show an almost indistinguishable excellent quality between the Ga2O3(Gd2O3)/GaAs and the Al0.45Ga0.55As/GaA s samples. This demonstrates the superiority of the Ga2O3(Gd2O3)/GaAs struc ture and supports further the reported successfully manufactured GaAs metal -oxide-semiconductor field-effect transistors using this Ga2O3(Gd2O3) as th e gate oxide. (C) 1999 American Institute of Physics. [S0003-6951(99)02640- 6].