Stretching quantum wells: A method for trapping free carriers in GaAs heterostructures

Authors
Negoita, V Snoke, DW Eberl, K
Citation
V. Negoita et al., Stretching quantum wells: A method for trapping free carriers in GaAs heterostructures, APPL PHYS L, 75(14), 1999, pp. 2059-2061
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
14
Year of publication
1999
Pages
2059 - 2061
Database
ISI
SICI code
0003-6951(19991004)75:14<2059:SQWAMF>2.0.ZU;2-0
Abstract
We have demonstrated a method of using inhomogeneous stress to create an in -plane harmonic potential in GaAs quantum wells which works equally well fo r excitons and for free conduction electrons. The depth of the well can be continuously varied via an external control. This essentially provides a ty pe of gate for controlling the motion of carriers, e.g., a two-dimensional electron gas, without using electric field. (C) 1999 American Institute of Physics. [S0003- 6951(99)00940-7].