Localization of Na impurities at the buried CdS/Cu(In, Ga)Se-2 heterojunction

Citation
C. Heske et al., Localization of Na impurities at the buried CdS/Cu(In, Ga)Se-2 heterojunction, APPL PHYS L, 75(14), 1999, pp. 2082-2084
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
14
Year of publication
1999
Pages
2082 - 2084
Database
ISI
SICI code
0003-6951(19991004)75:14<2082:LONIAT>2.0.ZU;2-3
Abstract
We demonstrate a general approach to identify and locate minority species a t buried interfaces which are of fundamental interest in many fields of sol id state research. The approach combines soft x-ray emission for bulk and p hotoelectron spectroscopy for surface sensitivity. In the present study, th e interface between a thin CdS layer and a Cu(In, Ga)Se-2 thin film solar c ell absorber has been investigated, showing that Na impurities are localize d at the buried CdS/Cu(In, Ga)Se-2 heterojunction. (C) 1999 American Instit ute of Physics. [S0003-6951(99)02740-0].