Growth of high quality, large grain size, highly oriented diamond on Si (100)

Microwave and hot filament chemical vapor deposition processes were combine d to deposit highly oriented and textured diamond films on Si (100). The se quential growth process yields closely packed crystallites with (100) surfa ces that show no grain boundaries over areas of up to 60 000 mu m(2) by sca nning electron microscopy. The diamond crystallites have the same orientati on as the Si (100) substrate and their orientational order and surface qual ity as measured by low energy electron diffraction is comparable to that of single crystal diamond. Micro-Raman spectroscopy confirms the exceptional quality of the film surface by the complete absence of a luminescence backg round as well as the absence of spectral features attributed to nondiamond carbon phases. (C) 1999 American Institute of Physics. [S0003- 6951(99)0384 0-1].