Topographic and electronic studies of wedge-shape surface defects on AlGaAs/GaAs films grown on Ge substrates

Authors
Xu, Q Hsu, JWP Carlin, JA Sieg, RM Boeckl, JJ Ringel, SA
Citation
Q. Xu et al., Topographic and electronic studies of wedge-shape surface defects on AlGaAs/GaAs films grown on Ge substrates, APPL PHYS L, 75(14), 1999, pp. 2111-2113
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
14
Year of publication
1999
Pages
2111 - 2113
Database
ISI
SICI code
0003-6951(19991004)75:14<2111:TAESOW>2.0.ZU;2-E
Abstract
Topographic changes and surface contact potential variations near defects o n the surface of AlGaAs/GaAs double heterojunction structures grown on Ge s ubstrates are studied using scanning force microscope and electrostatic for ce microscope. Comparison with transmission electron microscopy results ind icates that these surface defects are directly related to stacking faults o riginated from the GaAs/Ge interface. The surface contact potential inhomog eneities near these defects are consistent with variations in Si dopant con centration. (C) 1999 American Institute of Physics. [S0003-6951(99)01636-8] .