Q. Xu et al., Topographic and electronic studies of wedge-shape surface defects on AlGaAs/GaAs films grown on Ge substrates, APPL PHYS L, 75(14), 1999, pp. 2111-2113
Topographic changes and surface contact potential variations near defects o
n the surface of AlGaAs/GaAs double heterojunction structures grown on Ge s
ubstrates are studied using scanning force microscope and electrostatic for
ce microscope. Comparison with transmission electron microscopy results ind
icates that these surface defects are directly related to stacking faults o
riginated from the GaAs/Ge interface. The surface contact potential inhomog
eneities near these defects are consistent with variations in Si dopant con
centration. (C) 1999 American Institute of Physics. [S0003-6951(99)01636-8]
.