Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors

Authors
Levine, BF Pinzone, CJ Hui, S King, CA Leibenguth, RE Zolnowski, DR Lang, DV Krautter, HW Geva, M
Citation
Bf. Levine et al., Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors, APPL PHYS L, 75(14), 1999, pp. 2141-2143
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
14
Year of publication
1999
Pages
2141 - 2143
Database
ISI
SICI code
0003-6951(19991004)75:14<2141:UWSP>2.0.ZU;2-G
Abstract
A method of wafer bonding is demonstrated which significantly reduces the t hermal expansion mismatch stress, by removing the substrate before the high temperature anneal, thereby allowing elastic accommodation of the thin dev ice layers. Record low-dark-current Si/InGaAs pin detectors have been reali zed. (C) 1999 American Institute of Physics. [S0003-6951(99)02940-X].