The influence of radiation-induced thermal defects on characteristics of power silicon p-n-structures

Authors
Korshunov, FP Bogatyrev, YV Zhdanovich, NE Marchenko, IG
Citation
Fp. Korshunov et al., The influence of radiation-induced thermal defects on characteristics of power silicon p-n-structures, DAN BELARUS, 43(1), 1999, pp. 113-116
Citations number
13
Categorie Soggetti
Multidisciplinary
Journal title
DOKLADY AKADEMII NAUK BELARUSI
ISSN journal
0002354X → ACNP
Volume
43
Issue
1
Year of publication
1999
Pages
113 - 116
Database
ISI
SICI code
0002-354X(199901/02)43:1<113:TIORTD>2.0.ZU;2-I
Abstract
Data of a study of the influence of the effective recombination centres for med in diffusion p-n-structures on Si exposed to electron irradiation follo wed by annealing in the temperature range 400-600 degrees C on their charac teristics in the operation temperature range 77-400 K are given;in this art icle.