52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W

Citation
K. Takahata et al., 52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W, ELECTR LETT, 35(19), 1999, pp. 1639-1640
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
19
Year of publication
1999
Pages
1639 - 1640
Database
ISI
SICI code
0013-5194(19990916)35:19<1639:5BMIWP>2.0.ZU;2-D
Abstract
A long-wavelength monolithic photoreceiver has been fabricated using a mult imode waveguide pin photodiode and an HEMT loss-compensated distributed amp lifier. It provides an O/E conversion factor of 105V/W and a 3dB-down bandw idth of 52GHz, which is the largest bandwidth for any integrated photorecei ver reported to date.