High-power and high temperature long-term stability of Al-free 950nm laserstructures on GaAs

Authors
Beister, G Erbert, G Knauer, A Maege, J Ressel, P Sebastian, J Staske, R Wenzel, H
Citation
G. Beister et al., High-power and high temperature long-term stability of Al-free 950nm laserstructures on GaAs, ELECTR LETT, 35(19), 1999, pp. 1641-1643
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
19
Year of publication
1999
Pages
1641 - 1643
Database
ISI
SICI code
0013-5194(19990916)35:19<1641:HAHTLS>2.0.ZU;2-K
Abstract
A-free InGaAs/InGaAsP/InGaP broad area lasers emitting at 950nm show low de gradation rates below 6 x 10(-5)/h, under conditions of 1.5W emission power per 100 mu m stripe width at 50 degrees C and 4W/200 mu m at room temperat ure.