High power CW operation of InGaAsN lasers at 1.3 mu m

Room temperature, continuous-wave operation at 1.3 mu m is reported for InG aAsN triple quantum well lasers. The layers were grown by MBE using an RF-c oupled plasma source for nitrogen. Large broad area lasers exhibit very low threshold current density down to 680A/cm(2) and a slope efficiency of 0.5 9W/A (output per two facets). Maximum output powers of 2.4 and 4W are reach ed at 10 degrees C under CW and pulsed operation, respectively. These value s are a significant improvement over those previously published for lasers in the InGaAsN material system.