InAlGaAs fully quaternary doped-channel FETs recessed by CHF3+BCl3 reactive ion etching

Authors
Lai, LS Kao, HC Chan, YJ
Citation
Ls. Lai et al., InAlGaAs fully quaternary doped-channel FETs recessed by CHF3+BCl3 reactive ion etching, ELECTR LETT, 35(19), 1999, pp. 1674-1676
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
19
Year of publication
1999
Pages
1674 - 1676
Database
ISI
SICI code
0013-5194(19990916)35:19<1674:IFQDFR>2.0.ZU;2-3
Abstract
InAlGaAs fully quaternary heterostructure doped-channel FETs recessed by CH F3 + BCl3 reactive ion etching have been fabricated. The etching selectivit y was optimised by adjusting the flaw rate ratio of this gas mixture. The d evice demonstrated good DC and microwave characteristics with a uniform dis tribution of threshold voltages, which illustrated the advantages of the RI E-recess process.