Citation
K. Elgaid et al., Optimisation of DC and RF performance of GaAsHEMT-based Schottky diodes, ELECTR LETT, 35(19), 1999, pp. 1678-1679
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
35
Issue
19
Year of publication
1999
Pages
1678 - 1679
Database
ISI
SICI code
0013-5194(19990916)35:19<1678:OODARP>2.0.ZU;2-J
Abstract
The authors show that in a GaAs HEMT-based monolithic millimetre-wave integ
rated circuit process flow, prior to gate metallisation the introduction of
a hydrofluoric acid cleaning process after gate recess etching results in
a significant reduction in the Schottky diode turn-on voltage, series resis
tance and bias dependent RF junction resistance.