Stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy (vol 34, pg 1970, 1998)

Authors
Herzog, WD Goldberg, BB Unlu, MS Singh, R Dabkowski, FP
Citation
Wd. Herzog et al., Stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy (vol 34, pg 1970, 1998), ELECTR LETT, 35(19), 1999, pp. 1679-1679
Citations number
1
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
19
Year of publication
1999
Pages
1679 - 1679
Database
ISI
SICI code
0013-5194(19990916)35:19<1679:SEFAGH>2.0.ZU;2-3