Low-threshold lasing from high-density InAs quantum dots of uniform size

Authors
Saito, H Nishi, K Sugimoto, Y Sugou, S
Citation
H. Saito et al., Low-threshold lasing from high-density InAs quantum dots of uniform size, ELECTR LETT, 35(18), 1999, pp. 1561-1563
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
18
Year of publication
1999
Pages
1561 - 1563
Database
ISI
SICI code
0013-5194(19990902)35:18<1561:LLFHIQ>2.0.ZU;2-4
Abstract
To construct the active region of a Fabry-Perot laser, high-density InAs qu antum dots having a narrow photoluminescence linewidth of similar to 30meV have been formed. A very low threshold current density of 76A/cm(2) was ach ieved at room temperature due to the high gain with narrow linewidth at the ground state of the quantum dots.