Realisation of highly efficient 850nm top emitting resonant cavity light emitting diodes

Authors
Bockstaele, R Derluyn, J Sys, C Verstuyft, S Moerman, I Van Daele, P Baets, R
Citation
R. Bockstaele et al., Realisation of highly efficient 850nm top emitting resonant cavity light emitting diodes, ELECTR LETT, 35(18), 1999, pp. 1564-1565
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
18
Year of publication
1999
Pages
1564 - 1565
Database
ISI
SICI code
0013-5194(19990902)35:18<1564:ROHE8T>2.0.ZU;2-V
Abstract
Highly efficient top emitting 850 nm resonant cavity LEDs (RCLEDs) with and without selectively oxidised current windows have been realised and compar ed. The oxidised RCLEDs have an increased efficiency, due to a larger carri er injection efficiency. The best devices show 14% overall quantum efficien cy, and a voltage drop of 1.8V at 3mA drive current.