High-speed and high-output voltage edge-illuminated refracting-facet photodiode

Authors
Fukano, H Muramoto, Y Matsuoka, Y
Citation
H. Fukano et al., High-speed and high-output voltage edge-illuminated refracting-facet photodiode, ELECTR LETT, 35(18), 1999, pp. 1581-1582
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
18
Year of publication
1999
Pages
1581 - 1582
Database
ISI
SICI code
0013-5194(19990902)35:18<1581:HAHVER>2.0.ZU;2-T
Abstract
A high-speed and high-output-peak-voltage edge-illuminated refracting-facet photodiode has been developed by employing a thin absorption layer. The fa bricated RFPD shows a responsivity as high as 0.69A/W even with an absorpti on layer as thin as 0.43 mu m, a maximum 3dB bandwidth of 66GHz, and a high -output peak voltage of > 2.5V.