High-performance 0.1 mu m gate-length Ge/Si0.4Ge0.6 p-channel MODFETs

Results are reported of high-transconductance p-channel MODFETs fabricated on Ge/Sio(0.4)Ge(0.6) strained-layer heterostructures grown by UHV-CVD. Dev ices with 0.1 mm gate length were fabricated on compressively-strained pure -Ge channels with a Hall mobility of 1750cm(2)/Vs (30900cm(2)/Vs) at room t emperature (T = 77K). These devices displayed room-temperature peak extrins ic transconductances as high as 317 mS/mm at V-ds = -0.6V, while the output conductance under the same bias conditions was only 18mS/mm, corresponding to a maximum voltage gain of 18. At T = 77K, peak extrinsic transconductan ces as high as 622 mS/mm were obtained at bias voltages as low as V-ds = -0 .2V. To our knowledge, the 77K transconductance is the highest ever reporte d for a p-type field effect transistor.