Characteristics of P-channel SOI LDMOS transistor with tapered field oxides

A new tapered TEOS oxide technique has been developed to use field oxide of the power integrated circuits. It pro,ides better uniformity of less than 3 % and reproducibility, On-resistance of P-channel RESURF (REduced SURface Field) LDMOS transistors has been optimized and improved by using a novel simulation and tapered TEOS field oxide on the drift region of the devices. With the similar breakdown voltage, at V-gs= -5.0 V, the specific on-resis tance of the LDMOS with the tapered field oxide is about 31.5 m Omega.cm(2) , while that of the LDMOS with the conventional field oxide is about 57 m O mega.cm(2) .