M. Bouroushian et al., HEXAGONAL CADMIUM CHALCOGENIDE THIN-FILMS PREPARED BY ELECTRODEPOSITION FROM NEAR-BOILING AQUEOUS-SOLUTIONS, Applied surface science, 115(2), 1997, pp. 103-110
Citations number
22
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Thin, n-type, CdSe and CdSexTe1-x semiconductive films were prepared b
y cathodic electrodeposition onto titanium electrodes. An electrochemi
cal cell was specially designed in order to perform electrodeposition
in a near-boiling aqueous-ethyleneglycol bath at a temperature of appr
oximately 110 degrees C. The composition of the as-grown films, their
crystal structure, morphology and band-gap width were studied as a fun
ction of the deposition potential and chalcogen ion concentration. It
is shown that high temperatures have a positive effect on the crystal
quality and the photoresponse stability of cadmium chalcogenide thin f
ilms even by employing electrolytes rather concentrated in selenous ac
id. Under specific conditions, a small shift in deposition potential b
rings about a complete phase transformation of the CdSe layers. In thi
s manner, the described method enables the preparation of hexagonal Cd
Se deposits.