INFLUENCE OF THE DEPOSITION PARAMETERS ON THE CHEMICAL-COMPOSITION OFREACTIVELY RF-SPUTTERED TIO2 ON SI

The influence of the reactive gas mixture and substrate temperature on the chemical composition of reactively rf magnetron sputtered TiO2 th in layers on Si substrates has been studied. A detailed investigation has been made of the transition layer between Si and TiO2. The composi tion of the films and the interface with the substrate were analyzed b y X-ray photoelectron spectroscopy (XPS). It was shown that in the ran ge of O-2 contents (0.3-50%) and the substrate temperature used (room temperature-300 degrees C), the layers always consisted of TiO2 and no evidence of Ti suboxides or non oxidized Ti was found. The compositio n of the TiO2-Si interface region was found to depend on the depositio n parameters. A SiO2 intermediate layer between Si and TiO2 was found to exist in all cases and its thickness to increase when increasing th e O-2 contents and the substrate temperature.