DEEP LEVELS IN SI-DOPED ALXGA1-XAS LAYERS

Deep-level transient spectroscopy (DLTS), multi-exponential DLTS and o ptical DLTS measurements were performed to investigate the deep levels in Si-doped AlxGa1-xAs layers grown by molecular beam epitaxy. The re sults of the DLTS and the multi exponential DLTS measurements showed t wo DX centers and those of the optical DLTS measurements showed two OX centers, The DX centers originate from the emission of the carriers t oward the conduction band and the OX centers are related to the captur e of the carriers from the conduction band by the DX centers. These re sults are in good agreement with the theory in which the levels of the DX centers in Si-doped AlxCr1-xAs layers have a capture and emission barrier due to the Si-doping.