EFFECT OF REDUCING PROCESS TEMPERATURE FOR PREPARING SRBI2TA2O9 IN A METAL FERROELECTRIC/SEMICONDUCTOR STRUCTURE/

A SrBi2Ta2O9 (SET) thin film was prepared on a CeO2/Si(100) substrate at a process temperature of 700 degrees C. In the X-ray photoelectron spectroscopy (XPS) analysis, no diffusion of Si; which had been observ ed in the 800 degrees C process sample, was detected in this 700 degre es C process sample. In the capacitance-voltage (C-V) measurement; the width of the threshold hysteresis (''memory window'') was observed to be 1.0 V. In the curve fitting of the C-V characteristics, the measur ed characteristics fit the calculated characteristics fairly well. It is considered that this fairly good fit is due to prevention of the di ffusion of Si and SET elements caused by reducing the process temperat ure for preparing the SET thin film.