A compact model for the current-voltage characteristics of a single electron transistor in the resonant transport mode

The current-voltage characteristics of a single electron transistor (SET) i n the resonant transport mode are investigated. In the future when SET devi ces are applied to integrated electronics, the quantum effect will seriousl y modify their characteristics in ultra-small geometry The current will be dominated by the resonant transport through narrow energy levels in the dot . The simple case of a two-level system is analyzed and the transport mecha nism is clarified. The transport property at low temperatures (higher than the Kondo temperature) in the low tunneling rate limit is discussed, and a current map where current values are classified in the gate bias-drain bias plane is provided. It was shown that the dynamic aspect of electron how se riously influences the current value.