A family of nonlinear resistor circuits with A and V-type I-V characteristi
cs is proposed by using capacitively coupled multi-input MOSFETs. Their I-V
characteristics can be easily altered by external control voltages. Moreov
er, the proposed circuits are fully compatible with a standard CMOS semicon
ductor process because only enhancement-type MOSFETs are necessary. Further
more, nonlinear capacitors can be used for the capacitively coupled multi-i
nput MOSFETs in the proposed circuits, so that a simple digital CMOS proces
s with nonlinear capacitors can be used to fabricate the proposed circuits.
Simple equations for a numerical simulation of the circuits are derived. M
oreover, results from numerical simulations and experiments with discrete e
lements are demonstrated.