Nonlinear resistor circuits using capacitively coupled multi-input MOSFETs

Citation
Y. Horio et al., Nonlinear resistor circuits using capacitively coupled multi-input MOSFETs, IEICE T FUN, E82A(9), 1999, pp. 1926-1936
Citations number
16
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES
ISSN journal
09168508 → ACNP
Volume
E82A
Issue
9
Year of publication
1999
Pages
1926 - 1936
Database
ISI
SICI code
0916-8508(199909)E82A:9<1926:NRCUCC>2.0.ZU;2-A
Abstract
A family of nonlinear resistor circuits with A and V-type I-V characteristi cs is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreov er, the proposed circuits are fully compatible with a standard CMOS semicon ductor process because only enhancement-type MOSFETs are necessary. Further more, nonlinear capacitors can be used for the capacitively coupled multi-i nput MOSFETs in the proposed circuits, so that a simple digital CMOS proces s with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. M oreover, results from numerical simulations and experiments with discrete e lements are demonstrated.