Low-temperature high-resolution resonant photoemission study of Kondo insulator Ce3Bi4Pt3

Authors
Takeda, Y Arita, M Okamura, Y Sato, H Shimada, K Mamiya, K Namatame, H Taniguchi, M Katoh, K Iga, F Takabatake, T
Citation
Y. Takeda et al., Low-temperature high-resolution resonant photoemission study of Kondo insulator Ce3Bi4Pt3, JPN J A P 1, 38, 1999, pp. 209-211
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Year of publication
1999
Supplement
1
Pages
209 - 211
Database
ISI
SICI code
Abstract
High-resolution Ce 4d-4f resonant photoemission spectroscopy has been perfo rmed on the Kondo insulator Ce3Bi4Pt3 at 12 K. By subtracting the off-reson ance spectrum (hv = 114 eV) from the on-resonance spectrum (hv = 122 eV), a measure of Ce 4f partial density of state is obtained. Temperature-depende nt Ce 4f spectra very close to EF are measured with ultrahigh-energy resolu tion (Delta E similar to 6 meV) and a clear depression of intensity is obse rved at 6 K, indicating a (pseudo)gap opening at low temperatures.