Specific aspects of X-ray diffraction on statistically distributed QDs in perfect crystal matrix

Crystalline (InAs-GaAs)/GaAs (001) multilayer periodic structures containin g InAs quantum dots (QDs) have been studied by SR-CTR (Synchrotron Radiatio n - Crystal Truncation Rod) and RSM (Reciprocal Space Mapping) methods. The appearance of a lateral long-range order in InAs-GaAs QDs has been demonst rated. A qualitative model of investigated structures has been suggested, w ithin which the static Debye-Waller factor has been obtained. Using a new s tatistical approach considering semidynamical X-ray diffraction allows both the CTR and RSM data to be simulated. The principal parameters of the inve stigated structures have been determined by means of a fitting procedure.