The (001) surface of the III-V alloy semiconductors exhibits many reconstru
ctions with large unit meshes. The appearance of a given reconstruction dep
ends on the processing conditions and, in particular on the stoichiometry a
t the surface. A surface X-ray diffraction study of the atomic structure of
the Sb-rich c(4x4) and the In-rich c(8x2) surfaces is described which allo
ws for the first time, a detailed atomic model of these important reconstru
ctions to be derived. The basic units consist of groups of Sb dimers and ro
ws of In atoms on top of an Sb terminated bulk. The local bonding is simila
r to that found in rhombahedral Sb and tetragonal In bulk structures. The r
esults explain why the Sb rich surface is used as a starting point for the
growth and are relevant to other III-V (001) surfaces.