XANES and XPS analyses of silicon irradiated by deuterium ions

XANES and X-ray photoelectron spectra (XPS) using synchrotron radiation as a X-ray source were applied for analysis of silicon crystalline irradiated by 5 keV deuterium ions. Si K-edge XANES spectra recorded either by a photo current or electron yield modes clearly showed a new absorption peak in add ition to the absorption due to surface SiO2. In Si Is XPS spectra, on the c ontrary, no clear peak or shoulder was detected except SiO2 species. Taking into account that Si K-edge XANES reflects the electron transition from Si Is to np (empty bound state), the new absorption peak is very likely cause d by the generation of localized electronic bond between Si and D in the vi cinity of the damaged region in the irradiated Si.