Thermal stability of atom configurations around Er atoms doped in InP by OMVPE

It has been found that there is a threshold growth temperature between 550 degrees C and 580 degrees C for the change of local structure around Pr ato ms in InP doped Er atoms grown by organometallic vapor phase epitaxy (OMVPE ). To understand whether the structure change is induced at the growing sur face or during the growth as an in situ annealing, the thermal stability of the local structures around the Er atoms doped in InP by the OMVPE at 530 degrees C has been investigated by the extended X-ray absorption fine struc ture (EXAFS). The EXAFS analysis revealed that the local structure around t he Er atoms, which existed substitutionally on In sites in the InP lattice, was stable against the post-growth annealing even for 1 h at 650 degrees C . Therefore, it is concluded that the local structures are formed on the gr owth front, and not in the volume of InP by thermal annealing during or aft er the growth.