Angular dependence of Al-2p X-ray yield spectra of GaAs/AlAs/GaAs heterostructures

Authors
Inoue, K Agui, A Shin, S
Citation
K. Inoue et al., Angular dependence of Al-2p X-ray yield spectra of GaAs/AlAs/GaAs heterostructures, JPN J A P 1, 38, 1999, pp. 572-575
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Year of publication
1999
Supplement
1
Pages
572 - 575
Database
ISI
Abstract
The X-ray emission yield by the Al-2p core-exciton excitation in GaAs/AlAs/ GaAs heterostructures is studied theoretically: especially the angular corr elation between absorbed and emitted X-rays are discussed. It becomes clear that the angular dependence of the X-ray emission yield is drastically cha nged according to the excitation character whether 2p --> s or 2p --> d tra nsitions.