A new magnetron sputtering apparatus assisted by microwave plasma has been
developed to achieve high sputter deposition rates at low gas pressures. In
this apparatus, a microwave plasma is produced in a cylindrical multipolar
magnetron arrangement. and utilized for DC magnetron sputtering deposition
. With the assistance of microwave plasma, operation of the magnetron disch
arge has been achieved at pressures on the order of 10(-4) Torr. Aluminum f
ilms are deposited in this apparatus at rates greater than 50 nm/min even a
t the low gas pressure of 2.5 x 10(-4) Torr.