Dependence of driving frequency on capacitively coupled plasma in CF4

Citation
S. Segawa et al., Dependence of driving frequency on capacitively coupled plasma in CF4, JPN J A P 1, 38(7B), 1999, pp. 4416-4422
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
7B
Year of publication
1999
Pages
4416 - 4422
Database
ISI
SICI code
Abstract
A radio-frequency CF4 plasma in reactive-ion etcher with parallel plate geo metry is investigated in one dimension at a position space using the relaxa tion continuum model. The discharge with negative ions has the double layer similar in appearance to O-2; the structure and mechanism are markedly cha nged as a function of driving frequency. The effect of driving frequency is numerically studied between 13.56 MHz and 200 MHz for 200 mTorr and 50 mTo rr. In these studies, the plasma density is kept constant at similar to 10( 11) cm(-3), considering the charged species CF3+, CF2+, CF+, C+, F+, F-, an d electrons. The mean energy of charged particles is also discussed.