H. Fujiyama et al., Effects of crossed magnetic fields on silicon particles in plasma chemicalvapor deposition process, JPN J A P 1, 38(7B), 1999, pp. 4550-4555
In order to realize the preparation of large-area uniform hydrogenated amor
phous silicon thin films for solar cells under-dust particle-free process c
onditions, the scanning plasma method (SPM) using a crossed magnetic field
has been investigated to remove silicon particles produced in silane discha
rge. The silicon particles collected on the substrates were observed by sca
nning electron microscopy (SEM) to identify the crossed magnetic field effe
cts on particle removal and suppression in the present SPM process. In this
paper, the relationship between the externally applied crossed magnetic fi
eld and the particle behavior in silane plasma are reviewed from the viewpo
int of particle removal and suppression.