Effects of crossed magnetic fields on silicon particles in plasma chemicalvapor deposition process

Citation
H. Fujiyama et al., Effects of crossed magnetic fields on silicon particles in plasma chemicalvapor deposition process, JPN J A P 1, 38(7B), 1999, pp. 4550-4555
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
7B
Year of publication
1999
Pages
4550 - 4555
Database
ISI
SICI code
Abstract
In order to realize the preparation of large-area uniform hydrogenated amor phous silicon thin films for solar cells under-dust particle-free process c onditions, the scanning plasma method (SPM) using a crossed magnetic field has been investigated to remove silicon particles produced in silane discha rge. The silicon particles collected on the substrates were observed by sca nning electron microscopy (SEM) to identify the crossed magnetic field effe cts on particle removal and suppression in the present SPM process. In this paper, the relationship between the externally applied crossed magnetic fi eld and the particle behavior in silane plasma are reviewed from the viewpo int of particle removal and suppression.