Effects of gas flow on particle growth in silane RF discharges

Citation
Y. Matsuoka et al., Effects of gas flow on particle growth in silane RF discharges, JPN J A P 1, 38(7B), 1999, pp. 4556-4560
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
7B
Year of publication
1999
Pages
4556 - 4560
Database
ISI
SICI code
Abstract
The effects of gas flow on particle growth in silane RF discharges in a pla sma chemical vapor deposition (PCVD) reactor with a shower-type powered ele ctrode are studied using an in situ two-dimensional polarization-sensitive laser-light-scattering method. Particle growth depends on both the producti on of short-lifetime radicals and the loss of neural clusters in the radica l production region around the plasma/sheath boundary near the powered elec trode. Gas now of a velocity above about 6 cm/s is effective in suppressing particle growth because of increase in loss of neutral clusters, Moreover, particles larger than 120 nm in size that flow to the plasma/sheath bounda ry near the grounded electrode are found to pass through the sheath. This i mplies that such particles may deposit on film surfaces for PCVD reactors w ith the shower-type powered electrode.