Suppression of transient enhanced diffusion by local-oxidation-silicon-induced stress

We evaluated the transient enhanced diffusion (TED) of boron on two differe nt local oxidation silicon (LOCOS) structures. Boron profiles were measured by secondary ion mass spectroscopy (SIMS) sputtering from the back surface of the wafers to eliminate any effects caused by uneven surfaces of the LO COS structures. To evaluate the TED at the surface, we also measured the th reshold voltage roll-off of n-type metal-oxide-semiconductor transistors. T he TED of boron was suppressed for the LOGOS structure with a high mechanic al stress.