Transport properties of a resistively-coupled single-electron transistor

Authors
Wakaya, F Kitamura, K Iwabuchi, S Gamo, K
Citation
F. Wakaya et al., Transport properties of a resistively-coupled single-electron transistor, JPN J A P 1, 38(4B), 1999, pp. 2470-2472
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
4B
Year of publication
1999
Pages
2470 - 2472
Database
ISI
SICI code
Abstract
A resistively-coupled single-electron transistor (R-SET), whose gate was a tunnel resistor, was fabricated using a modulation-doped GaAs/AlGaAs hetero structure and metal Schottky gates. Observed current-voltage characteristic s show the Coulomb diamonds which are predicted for an R-SET. This means th at the tunnel resistor can he used as an R-SET gate.