Carrier mobility dependence of electron spin relaxation in GaAs quantum wells

Authors
Terauchi, R Ohno, Y Adachi, T Sato, A Matsukura, F Tackeuchi, A Ohno, H
Citation
R. Terauchi et al., Carrier mobility dependence of electron spin relaxation in GaAs quantum wells, JPN J A P 1, 38(4B), 1999, pp. 2549-2551
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
4B
Year of publication
1999
Pages
2549 - 2551
Database
ISI
SICI code
Abstract
We have investigated the electron mobility (mu) dependence and the electron quantized energy dependence of the electron spin relaxation time (tau(s)) in n-type and undoped GaAs/AlGaAs multiple quantum wells at room temperatur e, tau(s) proportional to mu(-1) obtained from the experimental results is consistent with the theoretical prediction based on the D'yakonov-Perel' th eory.