Growth condition dependence of the photoluminescence properties of InxGa1-xN/InyGa1-yN multiple quantum wells grown by MOCVD

InxGa1-xN/InyGa1-yN multiple quantum wells have been grown by atmospheric p ressure metalorganic chemical vapour deposition and characterised by photol uminescence (PL) measurements. The influence of many different growth param eters has been systematically investigated. Use of a high ammonia flow rate and a moderate hydrogen Row rate are observed to be very important for obt aining samples of high indium content and high PL intensity. A low total ga s flow rate is also found to be best, and the benefits df using low growth rate and high trimethylindium flow rate are confirmed. Room temperature PL linewidths as low as 64 meV have been achieved.