Growth of continous and highly (100)-oriented beta-FeSi2 films on Si(001) from Si/Fe multilayers with SiO2 capping and templates

Authors
Suemasu, T Hiroi, N Fujii, T Takakura, K Hasegawa, F
Citation
T. Suemasu et al., Growth of continous and highly (100)-oriented beta-FeSi2 films on Si(001) from Si/Fe multilayers with SiO2 capping and templates, JPN J A P 2, 38(8A), 1999, pp. L878-L881
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
38
Issue
8A
Year of publication
1999
Pages
L878 - L881
Database
ISI
SICI code
Abstract
We fabricated continuous and highly (100)-oriented beta-FeSi2 films on Si(0 01) by annealing Si/Fe multilayers. An annealing temperature above 800 degr ees C was necessary to obtain high-quality beta-FeSi2, but the beta-FeSi2 a ggregated into islands due to the annealing. Such aggregation was prevented by a SiO2 capping layer deposited on the top of the Si/Fe multilayers, but the obtained beta-FeSi2 film showed a polycrystalline nature. Highly (100) -oriented continuous beta-FeSi2 film was obtained using Si/Fe multilayers o n a (100)-oriented beta-FeSi2 template, together with a SiO2 capping layer.