Fast polarization switching with memory effect in a vertical cavity surface emitting laser subject to modulated optical injection

Authors
Boiko, DL Stephan, GM Besnard, P
Citation
Dl. Boiko et al., Fast polarization switching with memory effect in a vertical cavity surface emitting laser subject to modulated optical injection, J APPL PHYS, 86(8), 1999, pp. 4096-4099
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
8
Year of publication
1999
Pages
4096 - 4099
Database
ISI
SICI code
0021-8979(19991015)86:8<4096:FPSWME>2.0.ZU;2-#
Abstract
The polarization state of a vertical cavity surface emitting laser (VCSEL) output was driven by means of optical injection from another VCSEL. The bis tability inherent to polarization locking allowed us to generate a memory e ffect. The control parameter was the modulated bias current of the maser la ser and effects were shown to exist at frequencies up to 1 GHz. (C) 1999 Am erican Institute of Physics. [S0021-8979(99)01120-2].