M. Yoshikawa et al., Band-gap renormalization and band filling in Si-doped GaN films studied byphotoluminescence spectroscopy, J APPL PHYS, 86(8), 1999, pp. 4400-4402
We have studied band-gap renormalization and band filling in Si-doped GaN f
ilms with free-electron concentrations up to 1.7 x 10(19) cm(-3), using tem
perature-dependent photoluminescence (PL) spectroscopy. The low-temperature
(2 K) PL spectra showed a line-shape characteristic for momentum nonconser
ving band-to-band recombination. The energy downshift of the low-energy edg
e of the PL line with increasing electron concentration n, which is attribu
ted to band-gap renormalization (BGR) effects, could be fitted by a n(1/3)
power law with a BGR coefficient of -4.7 x 10(-8) eV cm. The peak energy of
the room-temperature band-to-band photoluminescence spectrum was found to
decrease as the carrier concentration increases up to about 7 x 10(18) cm(-
3), followed by a high-energy shift upon further increasing carrier concent
ration, due to the interplay between the BGR effects and band filling. The
room-temperature PL linewidth showed a monotonic increase with carrier conc
entration, which could be described by a n(2/3) power-law dependence. (C) 1
999 American Institute of Physics. [S0021-8979(99)07819-6].