Tight-binding calculations of electronic properties of AgI

Authors
Laref, A Sekkal, W Zaoui, A Certier, M Aourag, H
Citation
A. Laref et al., Tight-binding calculations of electronic properties of AgI, J APPL PHYS, 86(8), 1999, pp. 4435-4439
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
8
Year of publication
1999
Pages
4435 - 4439
Database
ISI
SICI code
0021-8979(19991015)86:8<4435:TCOEPO>2.0.ZU;2-R
Abstract
The empirical tight-binding method is used to calculate the electronic band structure, density of states, and dielectric response function of AgI. Eff ective masses of electrons and holes, and the refractive index are also cal culated. The results are compared with other calculations. (C) 1999 America n Institute of Physics. [S0021-8979(99)07120-0].