Lithographically patterned wires of the charge-density-wave conductor Rb0.30MoO3

Citation
Oc. Mantel et al., Lithographically patterned wires of the charge-density-wave conductor Rb0.30MoO3, J APPL PHYS, 86(8), 1999, pp. 4440-4445
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
8
Year of publication
1999
Pages
4440 - 4445
Database
ISI
SICI code
0021-8979(19991015)86:8<4440:LPWOTC>2.0.ZU;2-T
Abstract
We have developed a technology for the patterning of thin films of the char ge-density-wave (CDW) conductor Rb0.30MoO3. By means of photolithography an d Ar-ion milling, wire structures are defined in the films. The Rb0.30MoO3 wires are contacted by (sub)micron Au contacts, which are fabricated by opt ical and electron-beam lithographic techniques. Electrical transport measur ements clearly demonstrate the CDW state in our patterned structures, inclu ding CDW sliding. Patterned wires enable the study of CDWs on mesoscopic le ngth scales. (C) 1999 American Institute of Physics. [S0021-8979(99)00520-4 ].