Asymmetry in the hysteresis loop of Pb(Zr0.53Ti0.47)O-3/SiO2/Si structures

Authors
Lin, Y Zhao, BR Peng, HB Hao, Z Xu, B Zhao, ZX Chen, JS
Citation
Y. Lin et al., Asymmetry in the hysteresis loop of Pb(Zr0.53Ti0.47)O-3/SiO2/Si structures, J APPL PHYS, 86(8), 1999, pp. 4467-4472
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
8
Year of publication
1999
Pages
4467 - 4472
Database
ISI
SICI code
0021-8979(19991015)86:8<4467:AITHLO>2.0.ZU;2-7
Abstract
The integrated ferroelectric/semiconductor systems, Pb(Zr0.53Ti0.47)O-3 (PZ T)/SiO2/Si have been prepared and investigated. It was found that an asymme try related to the conduction type of the substrate (Si) and the polarizati on direction of PZT exists in the polarization-voltage loops of the integra ted system. According to the configuration and the characteristic of the in tegrated structure, we suggest that the space charge layer in Si and the tu nneling process between Si and PZT during the polarization are the main cau ses for this asymmetry. (C) 1999 American Institute of Physics. [SS0021-897 9(99)07420-4].