Sb mediated C-60 film growth on mica, Si, and glass substrates

Authors
Citation
Wt. Xu et Jg. Hou, Sb mediated C-60 film growth on mica, Si, and glass substrates, J APPL PHYS, 86(8), 1999, pp. 4660-4667
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
8
Year of publication
1999
Pages
4660 - 4667
Database
ISI
SICI code
0021-8979(19991015)86:8<4660:SMCFGO>2.0.ZU;2-A
Abstract
The structure and growth morphology of Sb mediated C-60 films, prepared by predepositing a layer of surfactant Sb over mica(001), Si(111), and glass s ubstrates with the vacuum vapor deposition method, were studied along with pristine C-60 films by an atomic force microscope. It was found that the gr owth behavior of C-60 films was greatly affected by the substrate temperatu re. On the mica substrate, the average size of C-60 crystal grains in Sb me diated C-60 films was about two times larger than that in pristine C-60 fil ms. On Si and glass substrates, the predeposited Sb had no significant effe ct on the size of the C-60 crystal grains, but made C-60 films grow more ea sily especially at high substrate temperatures. Possible growth mechanisms of the Sb mediated C-60 films are proposed. (C) 1999 American Institute of Physics. [S0021-8979(99)09120-3].